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Planar Superconductor-Normal-Superconductor Josephson Junctions in MgB2

机译:mgB2中的平面超导体 - 正常 - 超导体约瑟夫森结

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摘要

Since the discovery of superconductivity in MgB2 considerable progress hasbeen made in determining the physical properties of the material, which arepromising for bulk conductors. Tunneling studies show that the material isreasonably isotropic and has a well-developed s-wave energy gap (∆),implying that electronic devices based on MgB2 could operate close to 30K.Although a number of groups have reported the formation of thin films bypost-reaction of precursors, heterostructure growth is likely to requireconsiderable technological development, making single-layer device structuresof most immediate interest. MgB2 is unlike the cuprate superconductors in thatgrain boundaries do not form good Josephson junctions, and although a SQUIDbased on MgB2 nanobridges has been fabricated, the nanobridges themselves donot show junction-like properties. Here we report the successful creation ofplanar MgB2 junctions by localised ion damage in thin films. The criticalcurrent (IC) of these devices is strongly modulated by applied microwaveradiation and magnetic field. The product of the critical current and normalstate resistance (ICRN) is remarkably high, implying a potential for very highfrequency applications.
机译:自从发现MgB2中的超导性以来,在确定材料的物理特性方面取得了长足的进步,这对于块状导体是有希望的。隧道研究表明,该材料是各向同性的,并且具有发达的s波能隙(∆),这意味着基于MgB2的电子设备可以工作在接近30K的水平。前体的反应,异质结构的增长可能需要相当大的技术发展,这使得单层器件结构成为最紧迫的关注。 MgB2与铜酸盐超导体的不同之处在于晶粒边界不会形成良好的约瑟夫森结,尽管已经制造了基于MgB2纳米桥的SQUID,但纳米桥本身并未显示出类似结的特性。在这里,我们报告了通过薄膜中的局部离子损伤成功创建了平面MgB2结。这些设备的临界电流(IC)受到微波辐射和磁场的强烈调制。临界电流与正常状态电阻(ICRN)的乘积非常高,这意味着在非常高频的应用中具有潜力。

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